STS3DNF30L n - channel 30v - 0.055 w - 3.5a - so-8 stripfet ? power mosfet preliminary data n typical r ds(on) = 0.055 w n standard outline for easy automated surfac mount assembly n low threshold drive description this power mosfet is the latest development of stmicroelectronics unique "single feature size ? " strip-based process. the resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility applications n dc motor drive n dc-dc converters n battery management in nomadic equipment n power management in portable/desktop pc s ? internal schematic diagram absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain- gate voltage (r gs = 20 k w )30v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c single operation drain current (continuous) at t c = 100 o c single operation 3.5 2.2 a a i dm ( ) drain current (pulsed) 14 a p tot total dissipation at t c = 25 o c dual operation total dissipation at t c = 25 o c single operation 2 1.6 w w ( ) pulse width limited by safe operating area type v dss r ds(on) i d STS3DNF30L 30 v < 0.065 w 3.5 a october 2000 so-8 1/5
thermal data r thj-amb t j t stg *thermal resistance junction-ambient singe operation max thermal resistance junction-ambient dual operation max maximum lead temperature for soldering purpose storage temperature 78 62.5 150 -55 to 150 o c/w o c/w o c o c (*) mounted on fr-4 board (t 10 sec) electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 10 m a m a i gss gate-source leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 10 v i d = 1.75 a v gs = 4.5 v i d = 1.75 a 0.055 0.06 0.065 0.09 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 3.5 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 6 a 6 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 420 62 20 550 80 30 pf pf pf STS3DNF30L 2/5
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 15 v i d = 2 a r g = 4.7 w v gs = 4.5 v 13 30 17 40 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 24 v i d =4 a v gs = 4.5 v 8 3.2 2.6 11 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 24 v i d = 4 a r g = 4.7 w v gs = 4.5 v 5 9 20 7 12 26 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 3.5 14 a a v sd ( * ) forward on voltage i sd = 3.5 a v gs = 0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4 a di/dt = 100 a/ m s v dd = 15 v t j = 150 o c 23 0.134 1.2 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area STS3DNF30L 3/5
dim. mm inch min. typ. max. min. typ. max. a1.750.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m0.60.023 s 8 (max.) 0016023 so-8 mechanical data STS3DNF30L 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com STS3DNF30L 5/5
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